Structural modifications of boron carbide irradiated by swift heavy ions

Boron carbide (B4C) behavior under irradiation is widely studied in order to predict the lifetime of this material future (Generation IV) nuclear fission reactors. This paper focused on effects high electronic stopping powers (Se) B4C structure modifications. Sintered samples were irradiated at room temperature with swift heavy ions (between 0.5 and 3 MeV·u − 1) corresponding Se values 4.1 15.4 keV·nm−1 range sample surface. In investigate structural changes as a function depth, transmission electron microscopy Raman mapping performed along path incident ions. For highest values, damage results creation large hillocks surface amorphization bulk. These are explained, frame inelastic thermal spike model, by local melting latent tracks that created only when irradiations above threshold evaluated around 9 keV nm−1.